型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
2SJ370 | SHINDENGEN ELECTRIC MFG.CO.LTD | 60V SERIES POWER MOSFET | 683 KB | 1 |  |
2SJ554 | RENESAS | Silicon P Channel MOS FET | 90 KB | 8 |  |
2SJ405 | RENESAS | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-220AB
| 77 KB | 0 |  |
2SJ270 | RENESAS | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-220AB
| 81 KB | 0 |  |
2SJ421 | Sanyo Semicon Device | Very High-Speed Switching Applications | 89 KB | 3 |  |
2SJ518AZTR | Sanyo Semicon Device | Very High-Speed Switching Applications | 89 KB | 3 |  |
2SJ586 | RENESAS | Silicon P Channel MOS FET High Speed Switching | 158 KB | 10 |  |
2SJ161 | RENESAS | Silicon P Channel MOS FET | 71 KB | 6 |  |
2SJ193 | Sanyo Semicon Device | Very High-Speed Switching Applications | 82 KB | 3 |  |
2SJ178 | NEC ELECTRONICS | P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING | 399 KB | 6 |  |
2SJ186 | RENESAS TECHNOLOGY CORP | Silicon P Channel MOS FET | 83 KB | 7 |  |
2SJ550STL | RENESAS TECHNOLOGY CORP | Silicon P Channel MOS FET | 83 KB | 7 |  |
2SJ648 | NEC ELECTRONICS | MOS FIELD EFFECT TRANSISTOR | 135 KB | 6 |  |
2SJ418-TL | NEC ELECTRONICS | MOS FIELD EFFECT TRANSISTOR | 135 KB | 6 |  |
2SJ327-Z | NEC ELECTRONICS | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | 347 KB | 6 |  |
2SJ348 | Sanyo Semicon Device | Ultrahigh-Speed Switching Applications | 39 KB | 4 |  |