型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
APT20M22LVFR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 66 KB | 4 | |
APT30GT60BRD | Advanced Power Technology | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. | 68 KB | 5 | |
APT60M60JLL | Advanced Power Technology | POWER MOS 7 R MOSFET | 110 KB | 5 | |
APT50GF120JRD | Advanced Power Technology | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. | 51 KB | 4 | |
APT60M25JVR | Advanced Power Technology | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. | 51 KB | 4 | |
APT77N60JC3 | MICROSEMI CORPORATION | Super Junction MOSFET | 185 KB | 5 | |
APT30D100BG | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 132 KB | 4 | |
APT2012SGC | Kingbright Corporation | Gallium Phosphide Green Light Emitting Diode. | 104 KB | 4 | |
APT50GF60LRD | Advanced Power Technology | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. | 112 KB | 7 | |
APT5022BN | Advanced Power Technology | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | 51 KB | 4 | |
APT6011LVR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 148 KB | 4 | |
APT8011JLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 112 KB | 5 | |
APT30M85BVR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 64 KB | 4 | |
APT1001RBVR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 68 KB | 4 | |
APT10090BLLG | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 68 KB | 4 | |
APT1002RBN | Advanced Power Technology | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | 50 KB | 4 | |