型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
APT1004R2BN | Advanced Power Technology | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | 50 KB | 4 | |
APT10026L2FLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 105 KB | 5 | |
APT10M09LVFR | Advanced Power Technology | POWER MOS V FREDFET | 149 KB | 4 | |
APT12031JFLL | Advanced Power Technology | POWER MOS 7 FREDFET | 95 KB | 5 | |
APT11N80BC3 | Advanced Power Technology | Super Junction MOSFET | 161 KB | 5 | |
APT15D100BHB | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 125 KB | 4 | |
APT15D60B | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 123 KB | 4 | |
APT15GP90B | Advanced Power Technology | The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. | 165 KB | 6 | |
APT30M45BVR | Advanced Power Technology | The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. | 165 KB | 6 | |
APT20M36BLL | Advanced Power Technology | POWER MOS 7 MOSFET | 167 KB | 5 | |
APT20M45SVFR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 97 KB | 4 | |
APT4020BVFR | Advanced Power Technology | POWER MOS V FREDFET | 73 KB | 4 | |
APT6010JLL | MICROSEMI CORPORATION | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 264 KB | 5 | |
APT50M80LLC | Advanced Power Technology | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. | 36 KB | 2 | |
APT6025BFLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 165 KB | 5 | |
APT8056BFR | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 165 KB | 5 | |