| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| APT30D100S | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 132 KB | 4 |  |
| APT30D20S | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 131 KB | 4 | |
| APT25GN120B | Advanced Power Technology | IGBT | 197 KB | 6 | |
| APT40DQ60S | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 133 KB | 4 | |
| APT40GF120JRD | Advanced Power Technology | The Fast IGBT⑩ is a new generation of high voltage power IGBTs | 51 KB | 4 | |
| APT30M36B2LL | Advanced Power Technology | POWER MOS 7 R MOSFET | 169 KB | 5 | |
| APT30M75SLL | Advanced Power Technology | POWER MOS 7 R MOSFET | 93 KB | 5 | |
| APT8028JVR | MICROSEMI CORPORATION | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 71 KB | 4 |  |
| APT6045CVR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 61 KB | 4 | |
| APT50M75JLLU2 | MICROSEMI CORPORATION | Boost chopper MOSFET Power Module | 493 KB | 8 | |
| APT6013B2FLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 144 KB | 5 | |
| APT6013B2LL | MICROSEMI CORPORATION | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 200 KB | 5 | |
| APT6015B2VR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 60 KB | 4 | |
| APT6025SVFR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 117 KB | 4 | |
| APT6025SVR | Advanced Power Technology | POWER MOS V MOSFET | 63 KB | 4 | |
| APT5017SLC | Advanced Power Technology | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. | 35 KB | 2 | |
