型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
CY7C1360B-200ACT | | | KB | | |
CY7C135B-133AC | | | KB | | |
CY7C1354C-166BGXI | CYPRESS SEMICONDUCTOR CORPORATION | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture | 516 KB | 28 |  |
CY7C1357A-133ACT | CYPRESS SEMICONDUCTOR CORPORATION | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture | 516 KB | 28 |  |
CY7C1372B-133BZC | CYPRESS SEMICONDUCTOR CORPORATION | 512K 】 36/1M 】 18 Pipelined SRAM with NoBL Architecture | 759 KB | 27 |  |
CY7C1370BV25-150AC | CYPRESS SEMICONDUCTOR CORPORATION | 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture | 726 KB | 26 |  |
CY7C1363A-100AI | CYPRESS SEMICONDUCTOR CORPORATION | 256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM | 818 KB | 26 |  |
CY7C1363A-117AJCT | CYPRESS SEMICONDUCTOR CORPORATION | 256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM | 818 KB | 26 |  |
CY7C1395A-150AC | CYPRESS SEMICONDUCTOR CORPORATION | 256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM | 818 KB | 26 |  |
CY7C1373D-100BZC | CYPRESS SEMICONDUCTOR CORPORATION | 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL⑩ Architecture | 1011 KB | 29 |  |
CY7C1345B-100BGI | CYPRESS SEMICONDUCTOR CORPORATION | 128K x 36 Synchronous Flow-Through 3.3V Cache RAM | 346 KB | 17 |  |
CY7C1354C-200BGXC | CYPRESS SEMICONDUCTOR CORPORATION | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture | 516 KB | 28 |  |
CY7C1354BV25-166BGC | CYPRESS SEMICONDUCTOR CORPORATION | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture | 516 KB | 28 |  |
CY7C1353F-100ACT | CYPRESS SEMICONDUCTOR CORPORATION | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture | 516 KB | 28 |  |
CY7C1353G-100AXCT | CYPRESS SEMICONDUCTOR CORPORATION | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture | 516 KB | 28 |  |
CY7C1354A-100AI | CYPRESS SEMICONDUCTOR CORPORATION | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture | 516 KB | 28 |  |