| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| GT60N321(Q) | KB | ||||
| GT64111-P | KB | ||||
| GT64010AB0 | KB | ||||
| GT64130-B | KB | ||||
| GT60M301 | TOSHIBA | N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) | 292 KB | 5 |  |
| GT60N321 | TOSHIBA | High Power Switching Applications The 4th Generation | 178 KB | 7 | |
| GT60M303 | TOSHIBA | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | 426 KB | 6 | |
| GT64012A | TOSHIBA | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | 426 KB | 6 | |
| GT60M104 | TOSHIBA | N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) | 253 KB | 4 | |
| GT60M103 | TOSHIBA | N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) | 253 KB | 4 | |
| GT64012 | TOSHIBA | N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) | 253 KB | 4 | |
| GT60M102 | TOSHIBA | N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) | 253 KB | 4 | |
| GT64120A-B-2 | TOSHIBA | N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) | 253 KB | 4 | |
| GT64120BB4 | TOSHIBA | N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) | 253 KB | 4 | |
| GT64010AP1 | TOSHIBA | N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) | 253 KB | 4 | |
| GT60J323 | TOSHIBA | Gate Bipolar Transistor Silicon N Channel IGBT | 175 KB | 6 | |
