型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
IXTQ75N10P | IXYS CORPORATION | N-Channel Enhancement Mode | 581 KB | 5 | |
IXTA12N50P | IXYS CORPORATION | N-Channel Enhancement Mode | 581 KB | 5 | |
IXSH35N100A | IXYS CORPORATION | High speed IGBT | 80 KB | 4 | |
IXGK60N60C2D1 | IXYS CORPORATION | HiPerFASTTM IGBT with Diode | 620 KB | 5 | |
IXGP8N100 | IXYS CORPORATION | IXGA8N100 | 102 KB | 2 | |
IXFX15N100 | IXYS CORPORATION | HiPerFET Power MOSFETs | 116 KB | 4 | |
IX2614CEZZ | IXYS CORPORATION | HiPerFET Power MOSFETs | 116 KB | 4 | |
IXFH15N65 | IXYS CORPORATION | HIPERFET Power MOSFTETs | 295 KB | 8 | |
IXFH170N10P | IXYS CORPORATION | Polar HiperFET Power MOSFET | 146 KB | 5 | |
IT8891BF-N | IXYS CORPORATION | Polar HiperFET Power MOSFET | 146 KB | 5 | |
IX0308C | IXYS CORPORATION | Polar HiperFET Power MOSFET | 146 KB | 5 | |
IX1796BMZZ | IXYS CORPORATION | Polar HiperFET Power MOSFET | 146 KB | 5 | |
IX2142-F12S | IXYS CORPORATION | Polar HiperFET Power MOSFET | 146 KB | 5 | |
ISPLSI2128VE180LB208 | LATTICE SEMICONDUCTOR CORPORATION | 3.3V In-System Programmable SuperFAST⑩ High Density PLD | 200 KB | 20 | |
ISPLSI5256VA125LB272 | LATTICE SEMICONDUCTOR CORPORATION | 3.3V In-System Programmable SuperFAST⑩ High Density PLD | 200 KB | 20 | |
ISPLSI5384AV100LB272 | LATTICE SEMICONDUCTOR CORPORATION | 3.3V In-System Programmable SuperFAST⑩ High Density PLD | 200 KB | 20 | |