| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| IRFI9630GPBF | Vishay Siliconix | Power MOSFET | 1579 KB | 8 |  |
| IRFPF42 | Vishay Siliconix | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4.3A I(D) | TO-247AC | 484 KB | 0 | |
| IRF9620R4941 | Vishay Siliconix | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4.3A I(D) | TO-247AC | 484 KB | 0 | |
| IRF9232 | SAMSUNG | P-CHANNEL POWER MOSFETS | 512 KB | 12 |  |
| IRFB11N50 | International Rectifier | Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=11A) | 100 KB | 8 |  |
| IRF9641 | Samsung semiconductor | P-CHANNEL POWER MOSFETS | 512 KB | 12 |  |
| IRF820SPBF | International Rectifier | HEXFET㈢ Power MOSFET | 319 KB | 9 | |
| IRF7832ZTR | International Rectifier | HEXFET㈢ Power MOSFET | 319 KB | 9 | |
| IRF6631TR1 | International Rectifier | HEXFET㈢ Power MOSFET | 319 KB | 9 | |
| IRF647 | International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 13A I(D) | TO-220AB | 45 KB | 0 | |
| IRF5840B | International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 13A I(D) | TO-220AB | 45 KB | 0 | |
| IRF3704ZL | International Rectifier | HEXFET Power MOSFET | 297 KB | 12 | |
| IR6675-56 | International Rectifier | HEXFET Power MOSFET | 297 KB | 12 | |
| IR3624M | International Rectifier | HEXFET Power MOSFET | 297 KB | 12 | |
| IR2C30N | International Rectifier | TRANSISTOR | BJT | ARRAY | COMM EMITTER | 20V V(BR)CEO | 120MA I(C) | SO | 175 KB | 0 | |
| IR2157S | International Rectifier | Ballast Control. Below Resonance Protection. Thermal Overload Protection. Protection from Failure to Strike. Programmable Preheat Time and Run Frequency. Programmable Deadtime in a 16-lead SOIC Narrow package | 307 KB | 0 | |
