型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
---|---|---|---|---|---|
IRF1018EPBF | International Rectifier | HEXFET Power MOSFET | 429 KB | 11 | |
IRF1313N-ND | International Rectifier | HEXFET Power MOSFET | 429 KB | 11 | |
IRF6633 | International Rectifier | DirectFET Power MOSFET | 266 KB | 9 | |
IRF7353TRPBF | International Rectifier | DirectFET Power MOSFET | 266 KB | 9 | |
IRF8736PBF | International Rectifier | HEXFET Power MOSFET | 247 KB | 9 | |
IRF9Z24NSPBF | International Rectifier | HEXFET Power MOSFET | 394 KB | 11 | |
IRF9Z24STRR | Vishay Siliconix | Power MOSFET | 2304 KB | 8 | |
IRF9241 | SAMSUNG | P-CHANNEL POWER MOSFETS | 512 KB | 12 | |
IRFP460NPBF | Vishay Siliconix | Power MOSFET | 162 KB | 8 | |
IRFP9241 | SAMSUNG | P-CHANNEL POWER MOSFETS | 512 KB | 12 | |
IRFP2410 | International Rectifier | Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon | 147 KB | 8 | |
IRFI540 | International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 17A I(D) | TO-220AB | 120 KB | 0 | |
IRFSZ44A | International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB | 284 KB | 0 | |
IRFU330BTU | International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB | 284 KB | 0 | |
IRFS9530 | International Rectifier | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 8A I(D) | SOT-186 | 286 KB | 0 | |
IRFR6215TR | International Rectifier | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 8A I(D) | SOT-186 | 286 KB | 0 |