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型号 厂家 描述 大小 页数 厂家标志
IRHN9230 International Rectifier TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A) 120 KB 4
IRHM8450 International Rectifier REPETITIVE AVALANCHE AND dv/dt RATED 311 KB 12
IRHM9230 International Rectifier TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A) 201 KB 4
IRHN57250SE International Rectifier RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) 176 KB 8
IRHM7250SE International Rectifier RADIATION HARDENED POWER MOSFET 140 KB 8
IRGP4055 International Rectifier RADIATION HARDENED POWER MOSFET 140 KB 8
IRGMC40F International Rectifier 547 KB 0
IRG4RC10STR International Rectifier TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA 150 KB 0
IRGI4060DPBF International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE 319 KB 10
IRG80N60UFD International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE 319 KB 10
IRGI4045DPBF International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE 327 KB 10
IRG5PC60RUF International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE 327 KB 10
IRG4RC10KTR International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE 327 KB 10
IRG4RC10KTRR International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE 327 KB 10
IRG4PC71UD International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE 327 KB 10
IRFZ44N-KOR International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE 327 KB 10
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