型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
IRHN9230 | International Rectifier | TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A) | 120 KB | 4 | |
IRHM8450 | International Rectifier | REPETITIVE AVALANCHE AND dv/dt RATED | 311 KB | 12 | |
IRHM9230 | International Rectifier | TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A) | 201 KB | 4 | |
IRHN57250SE | International Rectifier | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | 176 KB | 8 | |
IRHM7250SE | International Rectifier | RADIATION HARDENED POWER MOSFET | 140 KB | 8 | |
IRGP4055 | International Rectifier | RADIATION HARDENED POWER MOSFET | 140 KB | 8 | |
IRGMC40F | International Rectifier |
| 547 KB | 0 | |
IRG4RC10STR | International Rectifier | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA
| 150 KB | 0 | |
IRGI4060DPBF | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | 319 KB | 10 | |
IRG80N60UFD | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | 319 KB | 10 | |
IRGI4045DPBF | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | 327 KB | 10 | |
IRG5PC60RUF | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | 327 KB | 10 | |
IRG4RC10KTR | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | 327 KB | 10 | |
IRG4RC10KTRR | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | 327 KB | 10 | |
IRG4PC71UD | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | 327 KB | 10 | |
IRFZ44N-KOR | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | 327 KB | 10 | |