| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| IRG4CC20FB | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | CHIP | 52 KB | 0 | ||
| IRG4CC50WB | HITTITE MICROWAVE CORPORATION | IGBT Die in Wafer Form 600 V Size 5 WARP Speed | 35 KB | 1 |  |
| IRG4DC-20FD | HITTITE MICROWAVE CORPORATION | IGBT Die in Wafer Form 600 V Size 5 WARP Speed | 35 KB | 1 | |
| IRG4PC50FD-EPBF | HITTITE MICROWAVE CORPORATION | IGBT Die in Wafer Form 600 V Size 5 WARP Speed | 35 KB | 1 | |
| IRG4PF50WD-201P | HITTITE MICROWAVE CORPORATION | IGBT Die in Wafer Form 600 V Size 5 WARP Speed | 35 KB | 1 | |
| IRG4RC10UDTRLP | HITTITE MICROWAVE CORPORATION | IGBT Die in Wafer Form 600 V Size 5 WARP Speed | 35 KB | 1 | |
| IRG80N50RUFD | HITTITE MICROWAVE CORPORATION | IGBT Die in Wafer Form 600 V Size 5 WARP Speed | 35 KB | 1 | |
| IRG80N60UF | HITTITE MICROWAVE CORPORATION | IGBT Die in Wafer Form 600 V Size 5 WARP Speed | 35 KB | 1 | |
| IRG70N60D | HITTITE MICROWAVE CORPORATION | IGBT Die in Wafer Form 600 V Size 5 WARP Speed | 35 KB | 1 | |
| IRGI4056DPBF | HITTITE MICROWAVE CORPORATION | IGBT Die in Wafer Form 600 V Size 5 WARP Speed | 35 KB | 1 | |
| IRGI4064DPBF | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | 395 KB | 10 |  |
| IRGMH40F | International Rectifier | 461 KB | 0 | | |
| IRGPH50FD1 | International Rectifier | 461 KB | 0 | | |
| IRGRIBC30FD | International Rectifier | 461 KB | 0 | | |
| IRGVH50F | International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR | 535 KB | 8 | |
| IRHE9130 | International Rectifier | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) | 123 KB | 8 | |
