型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
IPI47N10SL-26 | INFINEON | SIPMOS Power-Transistor N-Channel Enhancement mode Logic Level | 3649 KB | 8 | |
IPI80N06S2L-11 | Infineon Technologies AG | OptiMOS Power-Transistor | 138 KB | 8 | |
IPIC44L01 | Infineon Technologies AG | OptiMOS Power-Transistor | 138 KB | 8 | |
IPI05CN10NG | INFINEON | OptiMOS?2 Power-Transistor | 443 KB | 11 | |
IPI60R250CP | Infineon Technologies AG | CoolMOSTM Power Transistor | 280 KB | 10 | |
IPI05CNE8N G | Infineon Technologies AG | CoolMOSTM Power Transistor | 280 KB | 10 | |
IPI26CN10NG | INFINEON | OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated | 547 KB | 12 | |
IPI60R099CP | Infineon Technologies AG | CoolMOS Power Transistor | 290 KB | 10 | |
IPI12CN10NG | INFINEON | OptiMOS?2 Power-Transistor Features N-channel, normal level Very low on-resistance R DS | 510 KB | 12 | |
IPIC0107B | INFINEON | OptiMOS?2 Power-Transistor Features N-channel, normal level Very low on-resistance R DS | 510 KB | 12 | |
IPIC6B595DW | INFINEON | OptiMOS?2 Power-Transistor Features N-channel, normal level Very low on-resistance R DS | 510 KB | 12 | |
IPI08CN10NG | INFINEON | OptiMOS?2 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) | 413 KB | 11 | |
IPI16CN10NG | Infineon Technologies AG | OptiMOS2 Power-Transistor | 912 KB | 12 | |
IPI60R125CP | Infineon Technologies AG | CoolMOSTM Power Transistor | 274 KB | 10 | |
IPI35CN10NG | Infineon Technologies AG | OptiMOS2 Power-Transistor | 907 KB | 12 | |
IPI50CN10NG | Infineon Technologies AG | OptiMOS2 Power-Transistor | 908 KB | 12 | |