| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| M5M418160BJ7 | KB | ||||
| M5M416400CJ-7 | KB | ||||
| M5M416400CTP-5 | KB | ||||
| M5M416400AJ-6 | KB | ||||
| M5M416400ATP-6 | KB | ||||
| M5M41000BL7 | KB | ||||
| M5M28F101VP15 | KB | ||||
| M5M29GB320VP | RENESAS | 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | 72 KB | 3 |  |
| M5M29GT160BVP-80 | MITSUBISHI ELECTRIC SEMICONDUCTOR | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | 229 KB | 25 |  |
| M5M27C512 | MITSUBISHI ELECTRIC SEMICONDUCTOR | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | 229 KB | 25 | |
| M5M27C256FD | MITSUBISHI ELECTRIC SEMICONDUCTOR | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | 229 KB | 25 | |
| M5M27C102JK-10 | MITSUBISHI ELECTRIC SEMICONDUCTOR | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | 229 KB | 25 | |
| M5M27C102JK12 | MITSUBISHI ELECTRIC SEMICONDUCTOR | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | 229 KB | 25 | |
| M5M27C201 | MITSUBISHI ELECTRIC SEMICONDUCTOR | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | 229 KB | 25 | |
| M5M2167P-70 | MITSUBISHI ELECTRIC SEMICONDUCTOR | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | 229 KB | 25 | |
| M5M256CRV-55LL | MITSUBISHI ELECTRIC SEMICONDUCTOR | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | 229 KB | 25 | |
