| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| MRF9582NT1 | FREESCALE SEMICONDUCTOR, INC | Silicon Lateral FET, N -Channel Enhancement-Mode MOSFET | 288 KB | 8 |  |
| MRFE6S9200HSR3 | FREESCALE SEMICONDUCTOR, INC | Silicon Lateral FET, N -Channel Enhancement-Mode MOSFET | 288 KB | 8 | |
| MRFG35005ANT1 | FREESCALE SEMICONDUCTOR, INC | Gallium Arsenide PHEMT RF Power Field Effect Transistor | 452 KB | 13 | |
| MRFIC1819R2 | FREESCALE SEMICONDUCTOR, INC | Gallium Arsenide PHEMT RF Power Field Effect Transistor | 452 KB | 13 | |
| MRFM51X02 | FREESCALE SEMICONDUCTOR, INC | Gallium Arsenide PHEMT RF Power Field Effect Transistor | 452 KB | 13 | |
| MRFL41A05 | FREESCALE SEMICONDUCTOR, INC | Gallium Arsenide PHEMT RF Power Field Effect Transistor | 452 KB | 13 | |
| MRFIC0931R2 | FREESCALE SEMICONDUCTOR, INC | Gallium Arsenide PHEMT RF Power Field Effect Transistor | 452 KB | 13 | |
| MRF904S | FREESCALE SEMICONDUCTOR, INC | Gallium Arsenide PHEMT RF Power Field Effect Transistor | 452 KB | 13 | |
| MRFG35005MR5 | FREESCALE SEMICONDUCTOR, INC | Gallium Arsenide PHEMT RF Power Field Effect Transistor | 452 KB | 13 | |
| MRFG35020AR1 | FREESCALE SEMICONDUCTOR, INC | Gallium Arsenide PHEMT RF Power Field Effect Transistor | 460 KB | 12 | |
| MRFIC0917 | MOTOROLA | 900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT | 168 KB | 10 |  |
| MRFE6S9200HS | MOTOROLA | 900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT | 168 KB | 10 | |
| MRF9282T1 | MOTOROLA | 900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT | 168 KB | 10 | |
| MRF933K-T | MOTOROLA | 900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT | 168 KB | 10 | |
| MRF9411/10E | MOTOROLA | 900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT | 168 KB | 10 | |
| MRF949T1/JL | MOTOROLA | 900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT | 168 KB | 10 | |
