| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| PTF240101S | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz | 243 KB | 12 |  |
| PTF5680K000BZR6 | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz | 243 KB | 12 | |
| PTF-511.8KBT-13B14 | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz | 243 KB | 12 | |
| PTF210901E-A | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz | 243 KB | 12 | |
| PTF10009 | ERICSSON MICROELECTRONICS | 85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor | 228 KB | 6 |  |
| PTF561450BT-10R36 | ERICSSON MICROELECTRONICS | 85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor | 228 KB | 6 | |
| PTFA082201E | INFINEON | Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz | 352 KB | 10 |  |
| PTF10134 | ERICSSON MICROELECTRONICS | 100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor | 318 KB | 7 | |
| PTF-108-01-S-D | ERICSSON MICROELECTRONICS | 100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor | 318 KB | 7 | |
| PTFA260451E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz | 225 KB | 10 | |
| PTFA211001E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz | 223 KB | 9 | |
| PTF102027 | ERICSSON MICROELECTRONICS | 40 Watts, 925-960 MHz GOLDMOS Field Effect Transistor | 207 KB | 6 | |
| PTF10139 | ERICSSON MICROELECTRONICS | 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor | 115 KB | 6 | |
| PTFA190451E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz | 375 KB | 10 | |
| PTF566K49BT-16RE6 | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz | 375 KB | 10 | |
| PTF080451E | INFINEON | LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz | 158 KB | 9 | |
