型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
QM300HA-2H | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH POWER SWITCHING USE INSULATED TYPE | 72 KB | 5 |  |
QM30DY-H | MITSUBISHI ELECTRIC SEMICONDUCTOR | MEDIUM POWER SWITCHING USE INSULATED TYPE | 69 KB | 5 |  |
QM30HA-H | MITSUBISHI ELECTRIC SEMICONDUCTOR | MEDIUM POWER SWITCHING USE INSULATED TYPE | 61 KB | 5 |  |
QM300HA-H | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH POWER SWITCHING USE INSULATED TYPE | 71 KB | 5 |  |
QM30TF-HB | MITSUBISHI ELECTRIC SEMICONDUCTOR | MEDIUM POWER SWITCHING USE INSULATED TYPE | 88 KB | 5 |  |
QM30DY-2H | MITSUBISHI ELECTRIC SEMICONDUCTOR | MEDIUM POWER SWITCHING USE INSULATED TYPE | 70 KB | 5 |  |
QM30HC-2H | MITSUBISHI ELECTRIC SEMICONDUCTOR | INDUCTION HEATER USE NON-INSULATED TYPE | 57 KB | 5 |  |
QM30TB-H | MITSUBISHI ELECTRIC SEMICONDUCTOR | INDUCTION HEATER USE NON-INSULATED TYPE | 57 KB | 5 |  |
QM300HA-24 | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH POWER SWITCHING USE INSULATED TYPE | 77 KB | 5 |  |
QM30DX-H | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH POWER SWITCHING USE INSULATED TYPE | 77 KB | 5 |  |
QM30E3Y-H | MITSUBISHI ELECTRIC SEMICONDUCTOR | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 600V V(BR)CEO | 30A I(C)
| 286 KB | 0 |  |
QM30TX-H | MITSUBISHI ELECTRIC SEMICONDUCTOR | MEDIUM POWER SWITCHING USE INSULATED TYPE | 84 KB | 5 |  |
QM30E3Y-2H | MITSUBISHI ELECTRIC SEMICONDUCTOR | MEDIUM POWER SWITCHING USE INSULATED TYPE | 101 KB | 6 |  |
QM30TB-2H | MITSUBISHI ELECTRIC SEMICONDUCTOR | MEDIUM POWER SWITCHING USE INSULATED TYPE | 78 KB | 5 |  |
QM30TB1-H | MITSUBISHI ELECTRIC SEMICONDUCTOR | MEDIUM POWER SWITCHING USE INSULATED TYPE | 78 KB | 5 |  |
QM300DY-2H | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH POWER SWITCHING USE INSULATED TYPE | 82 KB | 5 |  |