| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| RB110C | KB | ||||
| REG710NA-2.5/250 | TEXAS INSTRUMENTS | 60mA, 5.0V, Buck/Boost Charge Pump in ThinSOT-23 and ThinQFN | 777 KB | 22 |  |
| REF3012AIDBZR | Burr-Brown Corporation | 50ppm/C Max, 50UA in SOT23-3 CMOS VOLTAGE REFERENCE | 412 KB | 14 |  |
| REF192FSZ | ANALOG DEVICES INC | Precision Micropower, Low Dropout Voltage References | 649 KB | 28 |  |
| RE46C101E | ANALOG DEVICES INC | Precision Micropower, Low Dropout Voltage References | 649 KB | 28 | |
| REF01AJ | ANALOG DEVICES INC | +10V Precision Viltage Reference | 296 KB | 7 | |
| RT9169-15CX | RICHTEK TECHNOLOGY CORPORATION | 100 mA, 4uA QUIESCENT CURRENT CMOS LDO REGULATOR | 245 KB | 12 |  |
| RL5E945 | RICHTEK TECHNOLOGY CORPORATION | 100 mA, 4uA QUIESCENT CURRENT CMOS LDO REGULATOR | 245 KB | 12 | |
| RD28F1602C3B90 | INTEL CORPORATION | 3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye | 1223 KB | 70 |  |
| RGP10G | First Components International | 1.0 Amp FAST SWITCHING MEGARECTIFIERS Mechanical Dimensions | 145 KB | 2 |  |
| RF5187 | RF MICRO DEVICES | LOW POWER LINEAR AMPLIFIER | 207 KB | 8 |  |
| RFD16N05LSM9A | RF MICRO DEVICES | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 16A I(D) | TO-252AA | 180 KB | 0 | |
| RD3.3M-T1B | RF MICRO DEVICES | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 16A I(D) | TO-252AA | 180 KB | 0 | |
| RCL10485 | RF MICRO DEVICES | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 16A I(D) | TO-252AA | 180 KB | 0 | |
| RN1307 | TOSHIBA | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | 172 KB | 6 |  |
| RG82845SL5V7 | TOSHIBA | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | 172 KB | 6 | |
