| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| REG103UA-2.5 | Burr-Brown Corporation | DMOS 500mA Low Dropout Regulator | 500 KB | 19 |  |
| REF3225AIDBVR | Burr-Brown Corporation | 4ppm/C, 100UA, SOT23-6 SERIES VOLTAGE REFERENCE | 311 KB | 15 | |
| RFP18N10 | INTERSIL CORPORATION | 18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs | 38 KB | 5 |  |
| RFP45N03L | INTERSIL CORPORATION | 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs | 100 KB | 7 | |
| R3BMF1 | INTERSIL CORPORATION | 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs | 100 KB | 7 | |
| RC224ATLV | CONEXANT SYSTEMS, INC | EmbeddedModem Family | 1120 KB | 104 |  |
| RURP8120 | INTERSIL CORPORATION | 8A, 1200V Ultrafast Diode | 49 KB | 4 | |
| RTM680-627 | INTERSIL CORPORATION | 8A, 1200V Ultrafast Diode | 49 KB | 4 | |
| RURP3020 | INTERSIL CORPORATION | 30A, 200V Ultrafast Diode | 33 KB | 3 | |
| RN2422 | TOSHIBA | PNP EPITAXIAL TYPE (SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS) | 332 KB | 8 |  |
| RM20TPM-H | MITSUBISHI ELECTRIC SEMICONDUCTOR | MEDIUM POWER GENERAL USE INSULATED TYPE | 43 KB | 3 |  |
| RLZTE-1118C | MITSUBISHI ELECTRIC SEMICONDUCTOR | MEDIUM POWER GENERAL USE INSULATED TYPE | 43 KB | 3 | |
| RD4.7M-T2B | MITSUBISHI ELECTRIC SEMICONDUCTOR | MEDIUM POWER GENERAL USE INSULATED TYPE | 43 KB | 3 | |
| R3413 | MITSUBISHI ELECTRIC SEMICONDUCTOR | MEDIUM POWER GENERAL USE INSULATED TYPE | 43 KB | 3 | |
| R6650-11 | MITSUBISHI ELECTRIC SEMICONDUCTOR | MEDIUM POWER GENERAL USE INSULATED TYPE | 43 KB | 3 | |
| RH5VL23CA-T1 | MITSUBISHI ELECTRIC SEMICONDUCTOR | Voltage Detector | 300 KB | 0 | |
