| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| RG82845P | KB | ||||
| RG82845PESL6H5 | KB | ||||
| RG1ET-12V-H4 | KB | ||||
| RG2-12V-Y1 | KB | ||||
| RFT31002AOPQK | KB | ||||
| RFT31003-32BCCP-TR | KB | ||||
| RG0045N1 | KB | ||||
| RG1005P-152-B-T5 | KB | ||||
| RG10A | EIC discrete Semiconductors | SUPER FAST RECTIFIER DIODES | 42 KB | 2 |  |
| RFP50N06-NL | EIC discrete Semiconductors | SUPER FAST RECTIFIER DIODES | 42 KB | 2 | |
| RFM5P12 | Mospec Semiconductor | P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS | 244 KB | 4 |  |
| RFMIC1001 | Mospec Semiconductor | P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS | 244 KB | 4 | |
| RFN1022 | Mospec Semiconductor | P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS | 244 KB | 4 | |
| RFD8P06LESM9A_R4490 | Mospec Semiconductor | P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS | 244 KB | 4 | |
| RFF70N06/3 | Mospec Semiconductor | P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS | 244 KB | 4 | |
| RFD14LN05SM | Mospec Semiconductor | P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS | 244 KB | 4 | |
