| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| RN5RG40AA-TR | KB | ||||
| RN5VL36AA-TL | Voltage Detector | 300 KB | 0 | ||
| RN5VT11CA-TL | Voltage Detector | 300 KB | 0 | ||
| RN2910 | TOSHIBA | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) | 177 KB | 6 |  |
| RM4136D | TOSHIBA | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) | 177 KB | 6 | |
| RM20TPM-24 | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE | 44 KB | 3 |  |
| RM50DA-34F | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE | 44 KB | 3 | |
| RM912-15P | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE | 44 KB | 3 | |
| RM914-13 | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE | 44 KB | 3 | |
| RLZTE-1130B | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE | 44 KB | 3 | |
| RL3E862 | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE | 44 KB | 3 | |
| RL5C356 | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE | 44 KB | 3 | |
| RK73H1JLTD1001F | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE | 44 KB | 3 | |
| RK73H1JLTD3572F | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE | 44 KB | 3 | |
| RK73H1JLTD2670F | MITSUBISHI ELECTRIC SEMICONDUCTOR | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE | 44 KB | 3 | |
| RFW2N06RLE | INTERSIL CORPORATION | 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET | 41 KB | 5 |  |
