| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| RF06BW1781F | KB | ||||
| RF2314 | RF MICRO DEVICES | GENERAL PURPOSE LOW NOISE AMPLIFIER | 347 KB | 12 |  |
| RF1S70N06 | FAIRCHILD | 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs | 90 KB | 6 |  |
| RFG50N05 | INTERSIL CORPORATION | 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs | 47 KB | 6 |  |
| RFD14N06SM | INTERSIL CORPORATION | 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs | 47 KB | 6 | |
| RF5C292A | INTERSIL CORPORATION | 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs | 47 KB | 6 | |
| RH5RH583B-T1 | RICOH electronics devices division | PWM STEP-UP DC/DC CONVERTER | 199 KB | 29 |  |
| RH5RA50AA-T1 | RICOH electronics devices division | PWM STEP-UP DC/DC CONVERTER | 199 KB | 29 | |
| RHP56D/SP(R6789-51) | RICOH electronics devices division | PWM STEP-UP DC/DC CONVERTER | 199 KB | 29 | |
| RMPA0951-102 | RICOH electronics devices division | PWM STEP-UP DC/DC CONVERTER | 199 KB | 29 | |
| RK73H1JTTD7151F | RICOH electronics devices division | PWM STEP-UP DC/DC CONVERTER | 199 KB | 29 | |
| RN2611 | Toshiba Semiconductor | Silicon PNP Epitaxial Type (PCT Process) | 180 KB | 6 |  |
| RN46A1 | Toshiba Semiconductor | Silicon PNP Epitaxial Type (PCT Process) | 180 KB | 6 | |
| RN2963FS | Toshiba Semiconductor | Silicon PNP Epitaxial Type (PCT Process) | 180 KB | 6 | |
| RN4981 | TOSHIBA | Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) | 225 KB | 6 |  |
| RN5VL40CA-TR | TOSHIBA | Voltage Detector | 300 KB | 0 | |
