型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
S29AL032D70TF104 | | | KB | | |
S29AL032D70TTFI00 | | | KB | | |
S29GL01GP11FFCR10 | | | KB | | |
S29GL01GP12TFI020 | SPANSION | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology | 1561 KB | 71 | |
S29GL064A90TFIR90 | SPANSION | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology | 1561 KB | 71 | |
S29GL064M90BFIR00 | SPANSION | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology | 5012 KB | 160 | |
S29GL064M90FFIR40 | SPANSION | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology | 5012 KB | 160 | |
S29GL128N11TFIV10(PROG) | SPANSION | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology | 5012 KB | 160 | |
S29GL256M10TFIR1 | SPANSION | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology | 5012 KB | 160 | |
S29JL032H90BFI320 | SPANSION | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology | 5012 KB | 160 | |
S29WS256N0PBAW010 | SPANSION | 256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | 1696 KB | 95 | |
S29GL512N11TFIV10 | SPANSION | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology | 2631 KB | 100 | |
S29GL256P11FFIV20 | SPANSION | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology | 2631 KB | 100 | |
S29GL256M10TFIR2 | SPANSION | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology | 2631 KB | 100 | |
S29GL256M11TFIR10 | SPANSION | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology | 2631 KB | 100 | |
S29GL256N90TAIR10 | SPANSION | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology | 2631 KB | 100 | |