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型号	厂家	描述	大小	页数	厂家标志
TC55V2001ST-10LT			KB
TC58FVB321FT-70	TOSHIBA	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY	560 KB	48
TC5118160BFT-60	TOSHIBA	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY	560 KB	48
TC538200AF	TOSHIBA	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY	560 KB	48
TC551664BJI-15	TOSHIBA	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY	560 KB	48
TC511000AZ-70	TOSHIBA	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY	560 KB	48
TC58FVT400FT-85	TOSHIBA	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY	560 KB	48
TC55VBM416AFTN55	TOSHIBA	1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM	204 KB	14
TC514100ASJ-70	TOSHIBA	1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM	204 KB	14
TC551001CFT-85L	TOSHIBA	TC551001CP55	134 KB	3
TC514400AZ-80	TOSHIBA	TC551001CP55	134 KB	3
TC5565APL-10	TOSHIBA	65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology	119 KB	9
TC55RP2502ECB713	TOSHIBA	65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology	119 KB	9
TC551664AJ-20	TOSHIBA	65,536-WORD BY 16-BIT CMOS STATIC RAM	430 KB	8
TC5023BP	TOSHIBA	65,536-WORD BY 16-BIT CMOS STATIC RAM	430 KB	8
TC55V8512FTI-12	TOSHIBA	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS	170 KB	10

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