| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| TIM6472-4SL | TOSHIBA | MICROWAVE POWER GaAs FET | 170 KB | 4 |  |
| TIM6472-8SL | TOSHIBA | MICROWAVE POWER GaAs FET | 170 KB | 4 | |
| TIM5359-4SL | TOSHIBA | MICROWAVE POWER GaAs FET | 192 KB | 4 | |
| TIM1213-2L | TOSHIBA | MICROWAVE POWER GaAs FET | 192 KB | 4 | |
| TIM3742-30SL | TOSHIBA | MICROWAVE POWER GaAs FET | 192 KB | 4 | |
| TIM1414-10LA-252 | TOSHIBA | HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz | 187 KB | 4 | |
| TIM0910-4 | TOSHIBA | MICROWAVE POWER GaAs FET | 216 KB | 4 | |
| TIM1414-15-252 | TOSHIBA | MICROWAVE POWER GaAs FET | 216 KB | 4 | |
| TIM5359-80SL | TOSHIBA | IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level | 46 KB | 2 | |
| TIM7785-45SL | Toshiba Semiconductor | MICROWAVE POWER GaAs FET | 518 KB | 4 |  |
| TIM7785-4SL | Toshiba Semiconductor | MICROWAVE POWER GaAs FET | 518 KB | 4 | |
| TIM7785-6UL | TOSHIBA | MICROWAVE POWER GaAs FET | 47 KB | 4 | |
| TIM4450-25UL | TOSHIBA | HIGH POWER P1dB=44.5dBm at 4.4GHz to 5.0GHz | 50 KB | 4 | |
| TIM5964-16UL | TOSHIBA | HIGH POWER P1dB=42.5dBm at 5.9GHz to 6.4GHz | 145 KB | 4 | |
| TIM1314-9L | TOSHIBA | IM3(Min.)=−25dBc at Po=33dBm Single Carrier Level | 204 KB | 4 | |
| TIM0910-5 | TOSHIBA | MICROWAVE SEMICONDUCTOR TECHNICAL DATA | 358 KB | 4 | |
