| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| 2SA1342-TA | KB | ||||
| 2SA761 | KB | ||||
| 2SB1026DM | TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-243 | 23 KB | 0 | ||
| 2SB1054 | Inchange Semiconductor Company Limited | Silicon PNP Power Transistors | 142 KB | 3 |  |
| 2SB1109C | Inchange Semiconductor Company Limited | TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 | 34 KB | 0 | |
| 2SA2006E | Inchange Semiconductor Company Limited | TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 | 34 KB | 0 | |
| 2SA239 | Inchange Semiconductor Company Limited | TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 | 34 KB | 0 | |
| 2SA536 | Inchange Semiconductor Company Limited | TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 | 34 KB | 0 | |
| 2SA466 | Inchange Semiconductor Company Limited | TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 | 34 KB | 0 | |
| 2SB1548-P | Inchange Semiconductor Company Limited | TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 | 34 KB | 0 | |
| 2SB1422 | Inchange Semiconductor Company Limited | TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 | 34 KB | 0 | |
| 2SB1424-T100R | Inchange Semiconductor Company Limited | TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 | 34 KB | 0 | |
| 2SB1463 | PANASONIC | Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) | 36 KB | 2 |  |
| 2SB1259-5-TB | PANASONIC | Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) | 36 KB | 2 | |
| 2SB1218-R | PANASONIC | Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) | 36 KB | 2 | |
| 2SB533 | PANASONIC | Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) | 36 KB | 2 | |
