| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| 2SK2524-01MR | Fuji Electric | N-channel MOS-FET | 167 KB | 2 |  |
| 2SK323KD | Fuji Electric | N-channel MOS-FET | 167 KB | 2 | |
| 2SK3320 | TOSHIBA | Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications | 589 KB | 5 |  |
| 2SK3105T1B | TOSHIBA | Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications | 589 KB | 5 | |
| 2SK359-E | TOSHIBA | Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications | 589 KB | 5 | |
| 2SK3419 | RENESAS | Silicon N Channel MOS FET High Speed Power Switching | 121 KB | 8 |  |
| 2SK34A | RENESAS | Silicon N Channel MOS FET High Speed Power Switching | 121 KB | 8 | |
| 2SK524 | RENESAS | Silicon N Channel MOS FET High Speed Power Switching | 121 KB | 8 | |
| 2SK541 | RENESAS | Silicon N Channel MOS FET High Speed Power Switching | 121 KB | 8 | |
| 2SK4114 | RENESAS | Silicon N Channel MOS FET High Speed Power Switching | 121 KB | 8 | |
| 2SK3827 | Sanyo Semicon Device | N-Channel Silicon MOSFET General-Purpose Switching Device | 42 KB | 4 |  |
| 2SK3712 | Guangdong Kexin Industrial Co.,Ltd | MOS Field Effect Transistor | 45 KB | 1 |  |
| 2SK681 | NEC ELECTRONICS | N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING | 460 KB | 6 |  |
| 2W06G-E4/51 | Vishay Siliconix | Glass Passivated Single-Phase Bridge Rectifier | 98 KB | 4 |  |
| 2-X4316-0201 | Vishay Siliconix | Glass Passivated Single-Phase Bridge Rectifier | 98 KB | 4 | |
| 2STC4467 | STMICROELECTRONICS | High power NPN epitaxial planar bipolar transistor | 96 KB | 7 |  |
