| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| 2SD861B | KB | ||||
| 2SD667A | SeCoS Halbleitertechnologie GmbH | 1A , 120V NPN Plastic Encapsulated Transistor | 70 KB | 1 |  |
| 2SD661-S | SeCoS Halbleitertechnologie GmbH | 1A , 120V NPN Plastic Encapsulated Transistor | 70 KB | 1 | |
| 2SD602AR | SeCoS Halbleitertechnologie GmbH | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | TO-236AB | 66 KB | 0 | |
| 2SD88A3 | SeCoS Halbleitertechnologie GmbH | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | TO-236AB | 66 KB | 0 | |
| 2SD979 | SeCoS Halbleitertechnologie GmbH | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | TO-236AB | 66 KB | 0 | |
| 2SD977 | SeCoS Halbleitertechnologie GmbH | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | TO-236AB | 66 KB | 0 | |
| 2SF104B | SeCoS Halbleitertechnologie GmbH | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | TO-236AB | 66 KB | 0 | |
| 2SJ250 | SeCoS Halbleitertechnologie GmbH | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | TO-236AB | 66 KB | 0 | |
| 2SJ353 | NEC ELECTRONICS | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | 58 KB | 6 |  |
| 2SJ385 | NEC ELECTRONICS | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | 58 KB | 6 | |
| 2SJ606-Z | NEC ELECTRONICS | MOS FIELD EFFECT TRANSISTOR | 78 KB | 8 | |
| 2SJ550S | RENESAS | Silicon P Channel MOS FET | 95 KB | 9 |  |
| 2SJ506STR-E | RENESAS | Silicon P Channel MOS FET | 95 KB | 9 | |
| 2SJ476-01 | RENESAS | 487 KB | 0 | | |
| 2SJ420 | Sanyo Semicon Device | Ultrahigh-Speed Switching Applications | 89 KB | 3 |  |
