| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| 2N7002V-7 | DIODES INCORPORATED | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 87 KB | 3 |  |
| 2N7008RLRA | DIODES INCORPORATED | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 87 KB | 3 | |
| 2NT1-3 | DIODES INCORPORATED | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 87 KB | 3 | |
| 2PA1774R115 | DIODES INCORPORATED | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 87 KB | 3 | |
| 2PA1774RJ | DIODES INCORPORATED | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | SOT-490 | 38 KB | 0 | |
| 2PB11-T2 | DIODES INCORPORATED | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | SOT-490 | 38 KB | 0 | |
| 2R5TPE220M9 | DIODES INCORPORATED | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | SOT-490 | 38 KB | 0 | |
| 2SA1013O | DIODES INCORPORATED | TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1A I(C) | TO-92 | 208 KB | 0 | |
| 2S033 | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | 14 KB | 1 |  |
| 2SA1020-Y[TE6.F.M] | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | 14 KB | 1 | |
| 2SA1163GR | Seme LAB | TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-236AB | 232 KB | 0 | |
| 2SA1162(GR) | Seme LAB | TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-236AB | 232 KB | 0 | |
| 2SA1162-GA | Seme LAB | TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-236AB | 232 KB | 0 | |
| 2SA1310STA | Seme LAB | TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-236AB | 232 KB | 0 | |
| 2SA1304-Y | Seme LAB | TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-236AB | 232 KB | 0 | |
| 2SA1235-F | Seme LAB | TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-236AB | 232 KB | 0 | |
