| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| 2MBI150-060 | TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 150A I(C) | 47 KB | 0 | ||
| 278R05 | TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 150A I(C) | 47 KB | 0 | ||
| 24C16JI | TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 150A I(C) | 47 KB | 0 | ||
| 2302 | GHz Technology | 2.0 Watt - 20 Volts, Class C Microwave 2300 MHz | 78 KB | 2 |  |
| 232ACBN | GHz Technology | 2.0 Watt - 20 Volts, Class C Microwave 2300 MHz | 78 KB | 2 | |
| 2113 | GHz Technology | FERROGARD GD2 2N/C AC SS | 246 KB | 0 | |
| 24C04M8 | GHz Technology | FERROGARD GD2 2N/C AC SS | 246 KB | 0 | |
| 29646-01 | GHz Technology | FERROGARD GD2 2N/C AC SS | 246 KB | 0 | |
| 24LC515-I/P | MICROCHIP TECHNOLOGY | 512K I2C? CMOS Serial EEPROM | 352 KB | 24 |  |
| 2N4091 | New Jersey Semi-Conductor Products, Inc. | N-CHANNEL JFETS | 139 KB | 1 |  |
| 2N5781 | New Jersey Semi-Conductor Products, Inc. | SI PNP POWER BJT | 87 KB | 1 | |
| 2N5307 | New Jersey Semi-Conductor Products, Inc. | SILICON TRANSISTORS | 132 KB | 1 | |
| 2N5189 | New Jersey Semi-Conductor Products, Inc. | SILICON N-P-N HIGH-VOLTAGE TRANSISTOR | 145 KB | 1 | |
| 2N6394 | New Jersey Semi-Conductor Products, Inc. | CASE TO-220AB | 153 KB | 1 | |
| 2SA1734 | Guangdong Kexin Industrial Co.,Ltd | Silicon PNP Epitaxial | 56 KB | 2 |  |
| 2SB1126 | Sanyo Semicon Device | For Various Drivers | 81 KB | 3 |  |
