| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| 2SA1220 | Quanzhou Jinmei Electronic Co.,Ltd. | Silicon PNP Power Transistors | 194 KB | 4 |  |
| 2N7002DW-7 | Quanzhou Jinmei Electronic Co.,Ltd. | Silicon PNP Power Transistors | 194 KB | 4 | |
| 2SA1862 | Rohm | High-voltage Switching Transistor (−400V, −2A) | 97 KB | 3 |  |
| 2SB1203S | Rohm | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-252 | 505 KB | 0 | |
| 2SB1412TLQ | Rohm | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-252 | 505 KB | 0 | |
| 2SB766A-R | Rohm | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-252 | 505 KB | 0 | |
| 2SC2131 | MITSUBISHI ELECTRIC SEMICONDUCTOR | NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in UHF band Mobile radio applications) | 143 KB | 3 |  |
| 2SC2695 | MITSUBISHI ELECTRIC SEMICONDUCTOR | NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) | 186 KB | 4 | |
| 2SC2714-O | MITSUBISHI ELECTRIC SEMICONDUCTOR | NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) | 186 KB | 4 | |
| 2N4856A | New Jersey Semi-Conductor Products, Inc. | JFET SWITCHING | 196 KB | 2 |  |
| 2N5303 | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO3 | 15 KB | 1 |  |
| 2FI100F-060C | Seme LAB | BRIDGE MODULE DIODE | 105 KB | 0 | |
| 2MBI100J-060 | Seme LAB | BRIDGE MODULE DIODE | 105 KB | 0 | |
| 2AG3-0008 | Seme LAB | BRIDGE MODULE DIODE | 105 KB | 0 | |
| 2MBI400TC-060 | Seme LAB | BRIDGE MODULE DIODE | 105 KB | 0 | |
| 2N2218A | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO39 | 15 KB | 1 | |
