| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| 2N3439L | MICROSEMI CORPORATION | NPN LOW POWER SILICON TRANSISTOR | 106 KB | 2 |  |
| 2N3482 | MICROSEMI CORPORATION | UNIJUNCTION TRANSISTOR|2UA I(P)|TO-5 | 341 KB | 0 | |
| 2N3906(D27Z) | MICROSEMI CORPORATION | UNIJUNCTION TRANSISTOR|2UA I(P)|TO-5 | 341 KB | 0 | |
| 2N3882 | MICROSEMI CORPORATION | UNIJUNCTION TRANSISTOR|2UA I(P)|TO-5 | 341 KB | 0 | |
| 2N3431 | MICROSEMI CORPORATION | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 5A I(C) | STR-1/4 | 234 KB | 0 | |
| 2N3406 | MICROSEMI CORPORATION | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 5A I(C) | STR-1/4 | 234 KB | 0 | |
| 2N3413 | MICROSEMI CORPORATION | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 5A I(C) | STR-1/4 | 234 KB | 0 | |
| 2N3650 | MICROSEMI CORPORATION | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 5A I(C) | STR-1/4 | 234 KB | 0 | |
| 2N3689 | MICROSEMI CORPORATION | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 5A I(C) | STR-1/4 | 234 KB | 0 | |
| 2N377A | MICROSEMI CORPORATION | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 200MA I(C) | TO-5 | 341 KB | 0 | |
| 2N3783 | MICROSEMI CORPORATION | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 200MA I(C) | TO-5 | 341 KB | 0 | |
| 2N328A | New Jersey Semi-Conductor Products, Inc. | GENERAL PURPOSE SILICON EPITAXIAL JUNCTION PNP TRANSISTOR | 224 KB | 2 |  |
| 2N3064 | New Jersey Semi-Conductor Products, Inc. | GENERAL PURPOSE SILICON EPITAXIAL JUNCTION PNP TRANSISTOR | 224 KB | 2 | |
| 2N3065 | New Jersey Semi-Conductor Products, Inc. | GENERAL PURPOSE SILICON EPITAXIAL JUNCTION PNP TRANSISTOR | 224 KB | 2 | |
| 2N3114S | New Jersey Semi-Conductor Products, Inc. | GENERAL PURPOSE SILICON EPITAXIAL JUNCTION PNP TRANSISTOR | 224 KB | 2 | |
| 2N3055E | Seme LAB | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. | 14 KB | 1 |  |
