| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| 2SC1732 | KB | ||||
| 2SC1842 | NEC ELECTRONICS | NPN SILICON TRANSISTOR | 213 KB | 3 |  |
| 2SC1857 | NEC ELECTRONICS | NPN SILICON TRANSISTOR | 213 KB | 3 | |
| 2SC2133 | MITSUBISHI ELECTRIC SEMICONDUCTOR | NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in UHF band 24 to 28 volts operation applications) | 150 KB | 3 |  |
| 2SC2059K/JN | MITSUBISHI ELECTRIC SEMICONDUCTOR | NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in UHF band 24 to 28 volts operation applications) | 150 KB | 3 | |
| 2SC1901 | MITSUBISHI ELECTRIC SEMICONDUCTOR | NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in UHF band 24 to 28 volts operation applications) | 150 KB | 3 | |
| 2SC1909 | MITSUBISHI ELECTRIC SEMICONDUCTOR | NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in UHF band 24 to 28 volts operation applications) | 150 KB | 3 | |
| 2SC1949 | MITSUBISHI ELECTRIC SEMICONDUCTOR | NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in UHF band 24 to 28 volts operation applications) | 150 KB | 3 | |
| 2SC2238A | Inchange Semiconductor Company Limited | Silicon NPN Power Transistors | 138 KB | 3 |  |
| 2SC2230A | TOSHIBA | Silicon NPN Triple Diffused Type (PCT Process) | 133 KB | 5 |  |
| 2SC2354 | TOSHIBA | Silicon NPN Triple Diffused Type (PCT Process) | 133 KB | 5 | |
| 2SC2500C | TOSHIBA | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92 | 96 KB | 0 | |
| 2SC2505 | TOSHIBA | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92 | 96 KB | 0 | |
| 2SC269 | TOSHIBA | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92 | 96 KB | 0 | |
| 2SC2712GRT5L0KIF | TOSHIBA | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92 | 96 KB | 0 | |
| 2SC2732E | TOSHIBA | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92 | 96 KB | 0 | |
