| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| 2SC5504 | Sanyo Semicon Device | UHF to S Band Low-Noise Amplifier Applications | 48 KB | 6 |  |
| 2SC5570Q | Sanyo Semicon Device | UHF to S Band Low-Noise Amplifier Applications | 48 KB | 6 | |
| 2SC5623 | RENESAS | Silicon NPN Epitaxial High Frequency Low Noise Amplifier | 176 KB | 10 |  |
| 2SC5631JRTRE-E | RENESAS | Silicon NPN Epitaxial High Frequency Low Noise Amplifier | 176 KB | 10 | |
| 2SC5683 | Sanyo Semicon Device | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications | 28 KB | 4 | |
| 2SC5119 | Sanyo Semicon Device | TRANSISTOR | BJT | NPN | 550V V(BR)CEO | 8A I(C) | TO-263AB | 205 KB | 0 | |
| 2SC511R | Sanyo Semicon Device | TRANSISTOR | BJT | NPN | 550V V(BR)CEO | 8A I(C) | TO-263AB | 205 KB | 0 | |
| 2SC5163 | Sanyo Semicon Device | TRANSISTOR | BJT | NPN | 550V V(BR)CEO | 8A I(C) | TO-263AB | 205 KB | 0 | |
| 2SC5164 | Sanyo Semicon Device | TRANSISTOR | BJT | NPN | 550V V(BR)CEO | 8A I(C) | TO-263AB | 205 KB | 0 | |
| 2SC5165 | Sanyo Semicon Device | TRANSISTOR | BJT | NPN | 550V V(BR)CEO | 8A I(C) | TO-263AB | 205 KB | 0 | |
| 2SC5166 | Sanyo Semicon Device | TRANSISTOR | BJT | NPN | 550V V(BR)CEO | 8A I(C) | TO-263AB | 205 KB | 0 | |
| 2SC5167 | Sanyo Semicon Device | TRANSISTOR | BJT | NPN | 550V V(BR)CEO | 8A I(C) | TO-263AB | 205 KB | 0 | |
| 2SC5051 | RENESAS | Silicon NPN Epitaxial | 169 KB | 6 | |
| 2SC5053/CGQ | RENESAS | Silicon NPN Epitaxial | 169 KB | 6 | |
| 2SC5032 | PANASONIC | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) | 59 KB | 3 |  |
| 2SC5036 | PANASONIC | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) | 60 KB | 3 | |
