| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| 2SC2770 | New Jersey Semi-Conductor Products, Inc. | TRIPLE DIFFUSED PLANER TYPE BUILDING BLOCK TRANSISTOR | 162 KB | 1 |  |
| 2SC2736 | Guangdong Kexin Industrial Co.,Ltd | Silicon NPN Epitaxial | 36 KB | 1 |  |
| 2SC2411KT146R | Guangdong Kexin Industrial Co.,Ltd | Silicon NPN Epitaxial | 36 KB | 1 | |
| 2SC2555 | Savantic, Inc. | Silicon NPN Power Transistors | 179 KB | 4 |  |
| 2SC2812L6-TB | Savantic, Inc. | Silicon NPN Power Transistors | 179 KB | 4 | |
| 2SC2802 | Savantic, Inc. | Silicon NPN Power Transistors | 179 KB | 4 | |
| 2SC1507 | Inchange Semiconductor Company Limited | Silicon NPN Power Transistors | 136 KB | 3 |  |
| 2SC4211 | Inchange Semiconductor Company Limited | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR | 107 KB | 0 | |
| 2SC4261 | Inchange Semiconductor Company Limited | isc Silicon NPN RF Transistor | 213 KB | 6 | |
| 2SC4681 | TOSHIBA | NPN EPITAXIAL TYPE (STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS) | 86 KB | 1 |  |
| 2SC5600-T1 | TOSHIBA | TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 100MA I(C) | SOT-416VAR | 98 KB | 0 | |
| 2SC5110-Y | TOSHIBA | TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 100MA I(C) | SOT-416VAR | 98 KB | 0 | |
| 2SC5186 | NEC ELECTRONICS | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR | 196 KB | 21 |  |
| 2SC3099 | Guangdong Kexin Industrial Co.,Ltd | Silicon NPN Epitaxial | 35 KB | 1 | |
| 2SC3694 | Inchange Semiconductor Company Limited | Silicon NPN Power Transistors | 175 KB | 3 | |
| 2SC4536 | Inchange Semiconductor Company Limited | isc Silicon NPN RF Transistor | 192 KB | 6 | |
