型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
2SJ667 | Sanyo Semicon Device | 2SJ667 | 57 KB | 4 |  |
2SJ681 | TOSHIBA | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII) | 160 KB | 6 |  |
2SJ473-01 | TOSHIBA |
| 480 KB | 0 |  |
2SJ474-01 | TOSHIBA |
| 479 KB | 0 |  |
2SJ484WYTR | TOSHIBA |
| 479 KB | 0 |  |
2SJ552S | RENESAS | Silicon P Channel MOS FET | 96 KB | 9 |  |
2SJ553L | RENESAS | Silicon P Channel MOS FET | 96 KB | 9 |  |
2SJ634-TL-E | RENESAS | Silicon P Channel MOS FET | 96 KB | 9 |  |
2SJ419-TL | RENESAS | Silicon P Channel MOS FET | 96 KB | 9 |  |
2SJ346(TE85L) | RENESAS | Silicon P Channel MOS FET | 96 KB | 9 |  |
2SJ303-AZ | RENESAS | Silicon P Channel MOS FET | 96 KB | 9 |  |
2SJ343/KQ | RENESAS | Silicon P Channel MOS FET | 96 KB | 9 |  |
2SJ210-T2B | RENESAS | Silicon P Channel MOS FET | 96 KB | 9 |  |
2SJ203-T1 | RENESAS | Silicon P Channel MOS FET | 96 KB | 9 |  |
2SJ180 | NEC ELECTRONICS | P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING | 373 KB | 6 |  |
2SJ105-GR | NEC ELECTRONICS | P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING | 373 KB | 6 |  |