型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
3N128 | New Jersey Semi-Conductor Products, Inc. | N-CHANNEL INSULATED-GATE DEPLETION-TYPE FIELD-EFFECT TRANSISTOR | 153 KB | 1 |  |
3N141 | New Jersey Semi-Conductor Products, Inc. | N-CHANNEL INSULATED-GATE DEPLETION-TYPE FIELD-EFFECT TRANSISTOR | 153 KB | 1 |  |
3N157 | New Jersey Semi-Conductor Products, Inc. | N-CHANNEL INSULATED-GATE DEPLETION-TYPE FIELD-EFFECT TRANSISTOR | 153 KB | 1 |  |
3N159 | New Jersey Semi-Conductor Products, Inc. | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | TO-72
| 51 KB | 0 |  |
3N138 | New Jersey Semi-Conductor Products, Inc. | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | TO-72
| 51 KB | 0 |  |
3N158 | New Jersey Semi-Conductor Products, Inc. | TRANSISTOR | MOSFET | P-CHANNEL | 35V V(BR)DSS | 30MA I(D) | TO-72
| 240 KB | 0 |  |
3N193 | New Jersey Semi-Conductor Products, Inc. | TRANSISTOR | MOSFET | P-CHANNEL | 35V V(BR)DSS | 30MA I(D) | TO-72
| 240 KB | 0 |  |
3N143 | ETC | Silicon MOS Transistor | 410 KB | 5 |  |
3N154 | ETC | SILICON MOS TRANSISTOR | 252 KB | 4 |  |
3N142 | ETC | SILICON INSULATED GATE FIELD EFFECT TRANSISTOR | 278 KB | 5 |  |
3N188 | INTERSIL CORPORATION | N-CHANNEL JFET | 4130 KB | 122 |  |
3N155 | New Jersey Semi-Conductor Products, Inc. | MOSFET SWITCHING | 184 KB | 2 |  |
3N189 | INTERSIL CORPORATION | N-CHANNEL JFET | 4130 KB | 122 |  |
3N111 | New Jersey Semi-Conductor Products, Inc. | NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS | 148 KB | 1 |  |
3N165 | New Jersey Semi-Conductor Products, Inc. | (SINGLE, DUAL) MOS FET P-CHANNEL, ENHANCEMENT | 123 KB | 1 |  |
3N166 | New Jersey Semi-Conductor Products, Inc. | (SINGLE, DUAL) MOS FET P-CHANNEL, ENHANCEMENT | 123 KB | 1 |  |