| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| AN8049SH-E1V | KB | ||||
| AN80L29RMSTX | KB | ||||
| AN8389S-FE1 | KB | ||||
| AN983B-BG-T-V1 | KB | ||||
| ANAM80LD | KB | ||||
| AO4916L | List of Unclassifed Manufacturers | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode | 549 KB | 7 |  |
| AO6804 | ALPHA & OMEGA SEMICONDUCTORS | Dual N-Channel Enhancement Mode Field Effect Transistor | 143 KB | 4 |  |
| AO4940 | ALPHA & OMEGA SEMICONDUCTORS | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor | 498 KB | 6 | |
| AO4458 | ALPHA & OMEGA SEMICONDUCTORS | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor | 498 KB | 6 | |
| AO4800A | ALPHA & OMEGA SEMICONDUCTORS | Dual N-Channel Enhancement Mode Field Effect Transistor | 115 KB | 4 | |
| AP4501SM | ALPHA & OMEGA SEMICONDUCTORS | Dual N-Channel Enhancement Mode Field Effect Transistor | 115 KB | 4 | |
| AP1110 | RF MICRO DEVICES | AP1110 is a linear, low current power amplifier in ISM band utilizing InGaP /GaAs HBT process. The AP1110 is well suitable to be used for portable, low current 2.4GHz applications as well as for BT (Bluetooth) Class1 applications. The main features of AP1110 involve 2x2 compact profile; signal gain at 26 dB; typical power of 23dBm and PAE of 40% for BT Class1 under 3.3V. It is housed in a 2 x 2 (mm), 8-pin, and DFN leadless package. | 103 KB | 10 |  |
| AOD607 | ALPHA & OMEGA SEMICONDUCTORS | Complementary Enhancement Mode Field Effect Transistor | 143 KB | 7 | |
| APT1002R4BN | Advanced Power Technology | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | 50 KB | 4 |  |
| APM4500KC-TRL | Advanced Power Technology | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | 50 KB | 4 | |
| APM3020PU | Anpec Electronics Coropration | P-Channel Enhancement Mode MOSFET | 184 KB | 10 |  |
