| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| AS269D | KB | ||||
| AS2951ACS-5-B2 | KB | ||||
| AS116S-5.0 | KB | ||||
| AR5111A-ES | KB | ||||
| AR5210B-OO | KB | ||||
| AREC0173 | KB | ||||
| AS018M2-10 | SPDT RF Absorptive Switch | 120 KB | 0 | ||
| AQY221N1SZ | SPDT RF Absorptive Switch | 120 KB | 0 | ||
| AQW210HLA | Nais(Matsushita Electric Works) | GU (General Use) Type 2-Channel (Form A) Current Limit Function Type | 46 KB | 3 |  |
| APT50GF60JU2 | MICROSEMI CORPORATION | Boost chopper NPT IGBT | 465 KB | 8 |  |
| APT50GF60JU3 | Advanced Power Technology | ISOTOP Buck chopper NPT IGBT | 472 KB | 8 |  |
| APT40M90JN | Advanced Power Technology | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | 62 KB | 4 | |
| APT5019HVR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 60 KB | 4 | |
| APT5020SLC | Advanced Power Technology | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. | 35 KB | 2 | |
| APT50M80JLC | Advanced Power Technology | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. | 35 KB | 2 | |
| APT65GP60L2DF2 | Advanced Power Technology | POWER MOS 7 IGBT | 201 KB | 9 | |
