| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| APT40GP60F2 | KB | ||||
| APT30GT60CR | Advanced Power Technology | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. | 28 KB | 2 |  |
| APT2X60D30J | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 146 KB | 4 | |
| APT30D100BC | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 146 KB | 4 | |
| APT30D60BHBG | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 126 KB | 4 | |
| APT30D40H | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 23 KB | 2 | |
| APT30D40HCT | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODES | 58 KB | 4 | |
| APT20M42HVR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 68 KB | 4 | |
| APT2X30D40J | Advanced Power Technology | ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES | 67 KB | 4 | |
| APT100GF60B2R | Advanced Power Technology | The Fast IGBT is a new generation of high voltage power IGBTs. | 38 KB | 3 | |
| APT10M07JVFR | Advanced Power Technology | High Voltage N-Channel enhancement mode power MOSFET | 120 KB | 4 | |
| APT1004RCN | Advanced Power Technology | N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | 49 KB | 4 | |
| APT10050B2LC | Advanced Power Technology | Power MOS VITM is a new generation of low gate charge, high voltage | 68 KB | 2 | |
| APT10086SLC | Advanced Power Technology | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. | 35 KB | 2 | |
| APT12060B2VR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 39 KB | 2 | |
| APT12067B2LL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS | 70 KB | 2 | |
