| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| AF-S1 | KB | ||||
| AG8015 | KB | ||||
| AFZ219 | KB | ||||
| AGL3000NTC6-R22 | KB | ||||
| AGB3309S24Q1 | ANADIGICS, INC | 50з High Linearity Low Noise Internally Biased Wideband Gain Block | 288 KB | 8 |  |
| AGB3310S24Q1 | ANADIGICS, INC | 50з High Linearity Low Noise Internally Biased Wideband Gain Block | 288 KB | 8 | |
| AGR18060EF | TRIQUINT SEMICONDUCTOR | 60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor | 426 KB | 9 |  |
| AGR18090EF | TRIQUINT SEMICONDUCTOR | 90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor | 356 KB | 9 | |
| AGR09030EF | TRIQUINT SEMICONDUCTOR | 30 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET | 337 KB | 7 | |
| AGR21090EF | TRIQUINT SEMICONDUCTOR | 90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET | 427 KB | 9 | |
| AGR21125EF | TRIQUINT SEMICONDUCTOR | 125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET | 368 KB | 9 | |
| AGRF800S-1 | TRIQUINT SEMICONDUCTOR | 125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET | 368 KB | 9 | |
| AGL125V2-VQG100 | TRIQUINT SEMICONDUCTOR | 125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET | 368 KB | 9 | |
| AGQ200A4HX | TRIQUINT SEMICONDUCTOR | 125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET | 368 KB | 9 | |
| AH101QF | TRIQUINT SEMICONDUCTOR | 125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET | 368 KB | 9 | |
| AH0140D | TRIQUINT SEMICONDUCTOR | 125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET | 368 KB | 9 | |
