| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| APT60M75JLL | Advanced Power Technology | POWER MOS 7 R MOSFET | 162 KB | 5 |  |
| APT6013LFLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 144 KB | 5 | |
| APT50M50JLC | Advanced Power Technology | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. | 35 KB | 2 | |
| APT30D120BG | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 131 KB | 4 | |
| APT12GT60KR | Advanced Power Technology | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. | 25 KB | 2 | |
| APT15D120K | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 122 KB | 4 | |
| APT15D30K | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 116 KB | 4 | |
| APT10030L2VFR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 79 KB | 2 | |
| APSF1 | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 79 KB | 2 | |
| APT1001RBLC | Advanced Power Technology | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs | 35 KB | 2 | |
| APT10025JLC | Advanced Power Technology | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs | 35 KB | 2 | |
| APT102GA60B2 | MICROSEMI CORPORATION | High Speed PT IGBT | 232 KB | 6 |  |
| APT10M09B2VFR | Advanced Power Technology | POWER MOS V FREDFET | 149 KB | 4 | |
| APT100S20B | MICROSEMI CORPORATION | HIGH VOLTAGE SCHOTTKY DIODE | 196 KB | 4 | |
| APA600 | MICROSEMI CORPORATION | HIGH VOLTAGE SCHOTTKY DIODE | 196 KB | 4 | |
| AP6900SM | MICROSEMI CORPORATION | HIGH VOLTAGE SCHOTTKY DIODE | 196 KB | 4 | |
