| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| AP432VL-A | DIODES INCORPORATED | ADJUSTABLE PRECISION SHUNT REGULATOR | 281 KB | 14 |  |
| AP431Q | DIODES INCORPORATED | ADJUSTABLE PRECISION SHUNT REGULATOR | 285 KB | 14 | |
| AP4563GM | Advanced Power Electronics Corp. | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | 84 KB | 7 |  |
| AP4959GM | Advanced Power Electronics Corp. | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | 73 KB | 4 | |
| APA075-TQG100I | Advanced Power Electronics Corp. | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | 73 KB | 4 | |
| APD1110AR33 | Advanced Power Electronics Corp. | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | 73 KB | 4 | |
| APL78L05DC | Advanced Power Electronics Corp. | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | 73 KB | 4 | |
| APT 1147 | Advanced Power Electronics Corp. | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | 73 KB | 4 | |
| APS3608R | Advanced Power Electronics Corp. | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | 73 KB | 4 | |
| APT10040B2VR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs | 78 KB | 4 |  |
| APT1001RSLC | Advanced Power Technology | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs | 35 KB | 2 | |
| APM70N03GC-TR | Advanced Power Technology | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs | 35 KB | 2 | |
| APM4435KC-TR | Anpec Electronics Coropration | P-Channel Enhancement Mode MOSFET | 191 KB | 10 |  |
| APT1608YD | Kingbright Corporation | SUPER THIN SMD CHIP LED 1608(0603) | 214 KB | 1 |  |
| APT20GT60AR | Advanced Power Technology | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. | 27 KB | 2 | |
| APT2012SURC | Kingbright Corporation | 2.0x1.25mm SMD CHIP LED LAMP | 115 KB | 4 | |
