| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| APT1004RAN | TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3.9A I(D) | TO-3 | 212 KB | 0 | ||
| APT10035LLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 93 KB | 5 |  |
| APT10035JLL | Advanced Power Technology | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 93 KB | 5 | |
| APT10040LVR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs | 78 KB | 4 | |
| APT20M20B2LL | Advanced Power Technology | POWER MOS 7 MOSFET | 158 KB | 5 | |
| APT20GF120KR | Advanced Power Technology | The Fast IGBT is a new generation of high voltage power IGBTs. | 72 KB | 5 | |
| APT20M16B2FLL | Advanced Power Technology | POWER MOS 7 FREDFET | 165 KB | 5 | |
| APT2012NW-INT | Advanced Power Technology | POWER MOS 7 FREDFET | 165 KB | 5 | |
| APT12080LVFR | Advanced Power Technology | POWER MOS V | 133 KB | 4 | |
| APT15D20BCT | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 125 KB | 4 | |
| APT15D60BCT | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 125 KB | 4 | |
| APT5010B2VR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 61 KB | 4 | |
| APT50M50JFLL | MICROSEMI CORPORATION | POWER MOS 7 R FREDFET | 155 KB | 5 |  |
| APT50M65LLL | Advanced Power Technology | POWER MOS 7 R MOSFET | 101 KB | 5 | |
| APT6015JVR | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 70 KB | 4 | |
| APT8014L2FLL | MICROSEMI CORPORATION | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | 241 KB | 5 | |
