型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
APT25GP90BDQ1 | Advanced Power Technology | POWER MOS 7 IGBT | 443 KB | 9 | |
APT25GT120BR | Advanced Power Technology | Thunderbolt IGBT | 396 KB | 6 | |
APT30DQ60BCT | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 122 KB | 4 | |
APT30DQ120BCT | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 86 KB | 2 | |
APT50GF100BN | Advanced Power Technology | TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 50A I(C) | TO-247
| 227 KB | 0 | |
APT42F50B | MICROSEMI CORPORATION | N-Channel FREDFET | 132 KB | 4 | |
APT60N60BCSG | MICROSEMI CORPORATION | Super Junction MOSFET | 224 KB | 5 | |
APT50M75LFLLG | MICROSEMI CORPORATION | Super Junction MOSFET | 224 KB | 5 | |
APT75GT120JRDQ3 | Advanced Power Technology | Thunderbolt IGBT | 451 KB | 9 | |
APT902RBN | Advanced Power Technology | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 7A I(D) | TO-247AD
| 211 KB | 0 | |
APT8052BFLLG | Advanced Power Technology | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 7A I(D) | TO-247AD
| 211 KB | 0 | |
APT8065 | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 60 KB | 4 | |
APT801R4BN | Advanced Power Technology | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 8.5A I(D) | TO-247AD
| 183 KB | 0 | |
APT80M60J | MICROSEMI CORPORATION | N-Channel MOSFET | 136 KB | 4 | |
APT8M100B | MICROSEMI CORPORATION | N-Channel MOSFET | 264 KB | 4 | |
APTGF330DA60D3 | MICROSEMI CORPORATION | N-Channel MOSFET | 264 KB | 4 | |