| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| APT1003RKFLLG | KB | ||||
| APT1001 | Advanced Power Technology | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs | 35 KB | 2 |  |
| APT1001R1HN | Advanced Power Technology | TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO | 221 KB | 0 | |
| APT110GF60JN | Advanced Power Technology | TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO | 221 KB | 0 | |
| APT11F80B | MICROSEMI CORPORATION | N-Channel FREDFET | 204 KB | 4 |  |
| APT1222(EA) | MICROSEMI CORPORATION | N-Channel FREDFET | 204 KB | 4 | |
| APT12M80B | MICROSEMI CORPORATION | N-Channel MOSFET | 124 KB | 4 | |
| APT13003EU-E1 | BCD Semiconductor Manufacturing Limited | HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR | 237 KB | 9 |  |
| APT15DQ120KG | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 123 KB | 4 | |
| APT15S20KG | Advanced Power Technology | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | 123 KB | 4 | |
| APT1608PGW | ETC | SUPER THIN CHIP LED | 140 KB | 1 |  |
| APT18M80B | MICROSEMI CORPORATION | N-Channel MOSFET | 263 KB | 4 | |
| APT20M36BFLLG | MICROSEMI CORPORATION | N-Channel MOSFET | 263 KB | 4 | |
| APT20M38BVFRG | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 154 KB | 4 | |
| APT20M40JN | Advanced Power Technology | TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 77A I(D) | 194 KB | 0 | |
| APT20N60BC3G | Advanced Power Technology | TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 77A I(D) | 194 KB | 0 | |
