| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BF543E6327 | KB | ||||
| BF410C | SIEMENS SEMICONDUCTOR GROUP | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | 54 KB | 3 |  |
| BF423/G | SIEMENS SEMICONDUCTOR GROUP | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | 54 KB | 3 | |
| BF266 | SIEMENS SEMICONDUCTOR GROUP | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | 54 KB | 3 | |
| BF288 | SIEMENS SEMICONDUCTOR GROUP | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | 54 KB | 3 | |
| BF014E0472JDC | SIEMENS SEMICONDUCTOR GROUP | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | 54 KB | 3 | |
| BE485AKHJ\175 | SIEMENS SEMICONDUCTOR GROUP | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | 54 KB | 3 | |
| BE8330EPJ | SIEMENS SEMICONDUCTOR GROUP | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | 54 KB | 3 | |
| BDW73DR3671 | SIEMENS SEMICONDUCTOR GROUP | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | 54 KB | 3 | |
| BDW93AFP | SIEMENS SEMICONDUCTOR GROUP | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | 54 KB | 3 | |
| BDV14 | SIEMENS SEMICONDUCTOR GROUP | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | 54 KB | 3 | |
| BDT54 | SIEMENS SEMICONDUCTOR GROUP | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS | 54 KB | 3 | |
| BDT82F | Inchange Semiconductor Company Limited | isc Silicon PNP Power Transistors | 111 KB | 2 |  |
| BDT56 | Inchange Semiconductor Company Limited | isc Silicon PNP Power Transistors | 111 KB | 2 | |
| BD682-S | Inchange Semiconductor Company Limited | isc Silicon PNP Power Transistors | 111 KB | 2 | |
| BD6650F9-E2 | Inchange Semiconductor Company Limited | isc Silicon PNP Power Transistors | 111 KB | 2 | |
