| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BBL-102-T-F | KB | ||||
| BBOPA132U | KB | ||||
| BC161-6 | SIEMENS SEMICONDUCTOR GROUP | PNP SILICON TRANSISTORS | 140 KB | 4 |  |
| BBY66-05-02 | SIEMENS SEMICONDUCTOR GROUP | PNP SILICON TRANSISTORS | 140 KB | 4 | |
| BBY52-03W | SIEMENS SEMICONDUCTOR GROUP | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) | 18 KB | 3 | |
| BBY55-02V E6327 | SIEMENS SEMICONDUCTOR GROUP | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) | 18 KB | 3 | |
| BBY55-02W E6327 | SIEMENS SEMICONDUCTOR GROUP | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) | 18 KB | 3 | |
| BC213159A10AL | SIEMENS SEMICONDUCTOR GROUP | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) | 18 KB | 3 | |
| BC309(PRFMD) | SIEMENS SEMICONDUCTOR GROUP | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) | 18 KB | 3 | |
| BC327-25/B | SIEMENS SEMICONDUCTOR GROUP | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) | 18 KB | 3 | |
| BC337-025G | SIEMENS SEMICONDUCTOR GROUP | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) | 18 KB | 3 | |
| BC347 | Jiangsu Changjiang Electronics Technology Co., Ltd | TRANSISTOR (NPN) | 348 KB | 3 |  |
| BC337-25E7 | Jiangsu Changjiang Electronics Technology Co., Ltd | TRANSISTOR (NPN) | 348 KB | 3 | |
| BC413159A11U | Jiangsu Changjiang Electronics Technology Co., Ltd | TRANSISTOR (NPN) | 348 KB | 3 | |
| BC413C | Jiangsu Changjiang Electronics Technology Co., Ltd | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 | 429 KB | 0 | |
| BC556B T/R | Jiangsu Changjiang Electronics Technology Co., Ltd | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 | 429 KB | 0 | |
