| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BR93LC46RF-W | Rohm | 64】16bits serial EEPROM | 94 KB | 11 |  |
| BR93LC56RF-WFE2 | Rohm | 64】16bits serial EEPROM | 94 KB | 11 | |
| BR93CS46F | Rohm | Microwire Serial EEPROM | 441 KB | 0 | |
| BR93L46FVT-WE2 | Rohm | Microwire Serial EEPROM | 441 KB | 0 | |
| BR6265A-10LL | Rohm | Microwire Serial EEPROM | 441 KB | 0 | |
| BR82 | Shenzhen Ping Sheng Electronics Co., Ltd. | High forward surge current capability | 223 KB | 2 |  |
| BR84 | Shenzhen Ping Sheng Electronics Co., Ltd. | High forward surge current capability | 223 KB | 2 | |
| BS170_D75Z | Shenzhen Ping Sheng Electronics Co., Ltd. | High forward surge current capability | 223 KB | 2 | |
| BRT23H-X007T | Shenzhen Ping Sheng Electronics Co., Ltd. | High forward surge current capability | 223 KB | 2 | |
| BS120 | Sharp Electrionic Components | Photodiode for Visible Light | 30 KB | 2 |  |
| BS62LV256TC-70T | Sharp Electrionic Components | Photodiode for Visible Light | 30 KB | 2 | |
| BS62LV4006EIG70 | Brilliance Semiconductor | Very Low Power CMOS SRAM 512K X 8 bit | 403 KB | 12 |  |
| BS8973EPF/R6798-12 | Brilliance Semiconductor | Very Low Power CMOS SRAM 512K X 8 bit | 403 KB | 12 | |
| BSC079N10NS G | Brilliance Semiconductor | Very Low Power CMOS SRAM 512K X 8 bit | 403 KB | 12 | |
| BSM100GD60DN2 | Brilliance Semiconductor | Very Low Power CMOS SRAM 512K X 8 bit | 403 KB | 12 | |
| BSM75GD120 | Brilliance Semiconductor | Very Low Power CMOS SRAM 512K X 8 bit | 403 KB | 12 | |
