| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BCP68 E6327 | KB | ||||
| BCP69-16/IN | NXP | 20 V, 1 A PNP medium power transistor | 102 KB | 13 |  |
| BCP69-16T/R | NXP | 20 V, 1 A PNP medium power transistor | 102 KB | 13 | |
| BCR10CMW12R | NXP | 20 V, 1 A PNP medium power transistor | 102 KB | 13 | |
| BCR12KM | NXP | 20 V, 1 A PNP medium power transistor | 102 KB | 13 | |
| BCR169 E6327 | NXP | 20 V, 1 A PNP medium power transistor | 102 KB | 13 | |
| BCR196TE6327 | NXP | 20 V, 1 A PNP medium power transistor | 102 KB | 13 | |
| BCR3PM | MITSUBISHI ELECTRIC SEMICONDUCTOR | LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | 92 KB | 5 |  |
| BCR3AM8P1F9 | MITSUBISHI ELECTRIC SEMICONDUCTOR | LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | 92 KB | 5 | |
| BCR555 E6327 | MITSUBISHI ELECTRIC SEMICONDUCTOR | LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | 92 KB | 5 | |
| BCRH62-4R7M | MITSUBISHI ELECTRIC SEMICONDUCTOR | LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | 92 KB | 5 | |
| BCT125 | MITSUBISHI ELECTRIC SEMICONDUCTOR | LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | 92 KB | 5 | |
| BCT38245 | MITSUBISHI ELECTRIC SEMICONDUCTOR | LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | 92 KB | 5 | |
| BCT543 | MITSUBISHI ELECTRIC SEMICONDUCTOR | LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | 92 KB | 5 | |
| BCW33LT3 | MITSUBISHI ELECTRIC SEMICONDUCTOR | TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | SOT-23 | 458 KB | 0 | |
| BCW60D.215 | MITSUBISHI ELECTRIC SEMICONDUCTOR | TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | SOT-23 | 458 KB | 0 | |
