| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| BBY62 | Guangdong Kexin Industrial Co.,Ltd | UHF variable capacitance double diode | 34 KB | 1 |  |
| BBOPA2650U | Guangdong Kexin Industrial Co.,Ltd | UHF variable capacitance double diode | 34 KB | 1 | |
| BB659C E7902 | Guangdong Kexin Industrial Co.,Ltd | UHF variable capacitance double diode | 34 KB | 1 | |
| BB3554AM | MAXIM | Wideband Fast-Settling Operational Amplifier | 241 KB | 6 |  |
| BB506CFS-TL-E | MAXIM | Wideband Fast-Settling Operational Amplifier | 241 KB | 6 | |
| BB835 | SIEMENS SEMICONDUCTOR GROUP | Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units) | 24 KB | 2 |  |
| BBOPA650U | SIEMENS SEMICONDUCTOR GROUP | Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units) | 24 KB | 2 | |
| BB3650HG | SIEMENS SEMICONDUCTOR GROUP | Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units) | 24 KB | 2 | |
| BB721S | Guangdong Kexin Industrial Co.,Ltd | Tuner Diodes | 31 KB | 1 | |
| BB4206J | Guangdong Kexin Industrial Co.,Ltd | Tuner Diodes | 31 KB | 1 | |
| BB305M | RENESAS | Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | 212 KB | 10 |  |
| BB3508J | RENESAS | Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | 212 KB | 10 | |
| BB-689-E7902 | RENESAS | Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | 212 KB | 10 | |
| BB3652JG | RENESAS | Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | 212 KB | 10 | |
| BB3329/03 | RENESAS | Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | 212 KB | 10 | |
| BB4127KG | RENESAS | Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | 212 KB | 10 | |
